Broadening of mode-locking pulses in quantum-dot semiconductor lasers: Simulation, analysis and experiments
Authors
- Radziunas, Mindaugas
ORCID: 0000-0003-0306-1266 - Vladimirov, Andrei G.
ORCID: 0000-0002-7540-8380 - Viktorov, Evgeny A.
- Fiol, Gerrit
- Schmeckebier, Holger
- Bimberg, Dieter
2010 Mathematics Subject Classification
- 78A60 35Q60 35B30
2008 Physics and Astronomy Classification Scheme
- 42.55.Px, 42.60.Fc, 73.63.Kv, 85.30.De, 85.35.Be
Keywords
- mode-locking, semiconductor laser, quantum dots, saturable absorber, pulse broadening, trailing edge
DOI
Abstract
We consider a mode-locked quantum-dot edge-emitting semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model taking into account carrier exchange processes between a reservoir and the quantum dots. A comprehensive parameter study is presented and an analysis of mode-locking pulse broadening with an increase of injection current is performed. The results of our theoretical analysis are supported by experimental data demonstrating a strong pulse asymmetry in a monolithic two section quantum dot mode-locked laser.
Appeared in
- IEEE J. Quantum Electron., (2011) pp. 935-943.
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