Publications

Articles in Refereed Journals

  • M. O'Donovan, P. Farrell, T. Streckenbach, Th. Koprucki, S. Schulz, Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems, Optical and Quantum Electronics, 54 (2022), pp. 405/1--405/23, DOI 10.1007/s11082-022-03752-2 .
    Abstract
    Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based LED structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N single and multi-quantum well systems. To disentangle hole transport from electron transport and carrier recombination processes, we focus our attention on uni-polar (p-i-p) systems. The calculations employ our recently established multi-scale simulation framework that connects atomistic tight-binding theory with a macroscale drift-diffusion model. In addition to alloy fluctuations, we pay special attention to the impact of quantum corrections on hole transport. Our calculations indicate that results from a virtual crystal approximation present an upper limit for the hole transport in a p-i-p structure in terms of the current-voltage characteristics. Thus we find that alloy fluctuations can have a detrimental effect on hole transport in (In,Ga)N quantum well systems, in contrast to uni-polar electron transport. However, our studies also reveal that the magnitude by which the random alloy results deviate from virtual crystal approximation data depends on several factors, e.g. how quantum corrections are treated in the transport calculations.

  • B. Takács, Y. Hadjimichael, High order discretization methods for spatial-dependent epidemic models, Mathematics and Computers in Simulation, 198 (2022), pp. 211--236, DOI 10.1016/j.matcom.2022.02.021 .
    Abstract
    In this paper, an SIR model with spatial dependence is studied and results regarding its stability and numerical approximation are presented. We consider a generalization of the original Kermack and McKendrick model in which the size of the populations differs in space. The use of local spatial dependence yields a system of integro-differential equations. The uniqueness and qualitative properties of the continuous model are analyzed. Furthermore, different choices of spatial and temporal discretizations are employed, and step-size restrictions for population conservation, positivity, and monotonicity preservation of the discrete model are investigated. We provide sufficient conditions under which high order numerical schemes preserve the discrete properties of the model. Computational experiments verify the convergence and accuracy of the numerical methods.

Contributions to Collected Editions

  • M. O'Donovan, P. Farrell, T. Streckenbach, Th. Koprucki, S. Schulz, Carrier transport in (In,Ga)N quantum well systems: Connecting atomistic tight-binding electronic structure theory to drift-diffusion simulations, in: 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), IEEE Conference Publications Management Group, Piscataway, 2022, pp. 97--98, DOI 10.1109/NUSOD54938.2022.9894745 .

Preprints, Reports, Technical Reports

  • D. Abdel, N.E. Courtier, P. Farrell, Volume exclusion effects in perovskite charge transport modeling, Preprint no. 2965, WIAS, Berlin, 2022, DOI 10.20347/WIAS.PREPRINT.2965 .
    Abstract, PDF (863 kByte)
    Due to their flexible material properties, perovskite materials are a promising candidate for many semiconductor devices such as lasers, memristors, LEDs and solar cells. For example, perovskite-based solar cells have recently become one of the fastest growing photovoltaic technologies. Unfortunately, perovskite devices are far from commercialization due to challenges such as fast degradation. Mathematical models can be used as tools to explain the behavior of such devices, for example drift-diffusion equations portray the ionic and electric motion in perovskites. In this work, we take volume exclusion effects on ion migration within a perovskite crystal lattice into account. This results in the formulation of two different ionic current densities for such a drift-diffusion model -- treating either the mobility or the diffusivity as density-dependent while the other quantity remains constant. The influence of incorporating each current density description into a model for a typical perovskite solar cell configuration is investigated numerically, through simulations performed using two different open source tools.

  • D. Abdel, C. Chainais-Hillairet, P. Farrell, M. Herda, Numerical analysis of a finite volume scheme for charge transport in perovskite solar cells, Preprint no. 2958, WIAS, Berlin, 2022, DOI 10.20347/WIAS.PREPRINT.2958 .
    Abstract, PDF (855 kByte)
    In this paper, we consider a drift-diffusion charge transport model for perovskite solar cells, where electrons and holes may diffuse linearly (Boltzmann approximation) or nonlinearly (e.g. due to Fermi-Dirac statistics). To incorporate volume exclusion effects, we rely on the Fermi-Dirac integral of order −1 when modeling moving anionic vacancies within the perovskite layer which is sandwiched between electron and hole transport layers. After non-dimensionalization, we first prove a continuous entropy-dissipation inequality for the model. Then, we formulate a corresponding two-point flux finite volume scheme on Voronoi meshes and show an analogous discrete entropy-dissipation inequality. This inequality helps us to show the existence of a discrete solution of the nonlinear discrete system with the help of a corollary of Brouwer's fixed point theorem and the minimization of a convex functional. Finally, we verify our theoretically proven properties numerically, simulate a realistic device setup and show exponential decay in time with respect to the L2 error as well as a physically and analytically meaningful relative entropy.

Talks, Poster

  • D. Abdel, Volume exclusion effects in perovskite charge transport modeling (online talk), 22th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (Online Event, September 12 - 16, 2022, Politecnico di Torino, Italy.

  • Y. Hadjimichael, O. Marquardt, Ch. Merdon, P. Farrell, Band structures in highly strained 3D nanowires, 22th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (Online Event, Italy, September 12 - 16, 2022.

  • P. Farrell, Challenges for non-Boltzmann drift-diffusion charge transport simulations in semiconductors, International Conference on Boundary and Interior Layers, November 28 - December 2, 2022, Universidad de Buenos Aires, Argentina, December 1, 2022.

  • P. Farrell, Data-driven solutions of ill-posed inverse problems arising from doping reconstruction in semiconductors, AI4Science Konferenz, Rabat, Morocco, December 12 - 16, 2022.

  • P. Farrell, Numerical Methods for Innovative Semiconductors Devices, Leibniz-Institut für innovative Mikroelektronik (IHP), July 26, 2022.

  • D. Fritsch, Identifying and efficiently computing band-edge energies for charge transport simulations in strained materials, MATH+ Day 2022, Berlin, November 18, 2022.

External Preprints

  • M. O'Donovan, P. Farrell, J. Moatti, T. Streckenbach, Th. Koprucki, S. Schulz, Impact of random alloy fluctuations on the carrier distribution in multi-color (In,Ga)N/GaN quantum well systems, Preprint no. arXiv.2209.11657, Cornell University Library, arXiv.org, 2022, DOI 10.48550/arXiv.2209.11657 .
    Abstract
    In this work, we study the impact that random alloy fluctuations have on the distribution of electrons and holes across the active region of a (In,Ga)N/GaN multi-quantum well based light emitting diode (LED). To do so, an atomistic tight-binding model is employed to account for alloy fluctuations on a microscopic level and the resulting tight-binding energy landscape forms input to a drift-diffusion model. Here, quantum corrections are introduced via localization landscape theory and we show that when neglecting alloy disorder our theoretical framework yields results similar to commercial software packages that employ a self-consistent Schroedinger-Poisson-drift-diffusion solver. Similar to experimental studies in the literature, we have focused on a multi-quantum well system where two of the three wells have the same In content while the third well differs in In content. By changing the order of wells in this multicolor quantum well structure and looking at the relative radiative recombination rates of the different emitted wavelengths, we (i) gain insight into the distribution of carriers in such a system and (ii) can compare our findings to trends observed in experiment. Our results indicate that the distribution of carriers depends significantly on the treatment of the quantum well microstructure. When including random alloy fluctuations and quantum corrections in the simulations, the calculated trends in the relative radiative recombination rates as a function of the well ordering are consistent with previous experimental studies. The results from the widely employed virtual crystal approximation contradict the experimental data. Overall, our work highlights the importance of a careful and detailed theoretical description of the carrier transport in an (In,Ga)N/GaN multi-quantum well system to ultimately guide the design of the active region of III-N-based LED structures.

  • S. Piani, P. Farrell, W. Lei, N. Rotundo, L. Heltai, A weighted hybridizable discontinuous Galerkin method for drift-diffusion problems, Preprint no. 2211.02508, Cornell University Library, arXiv.org, 2022.

  • S. Piani, P. Farrell, W. Lei, N. Rotundo, L. Heltai, Data-driven solutions of ill-posed inverse problems arising from doping reconstruction in semiconductors, Preprint no. 2208.00742, Cornell University Library, arXiv.org, 2022.