logo WIAS-QW for the simulation of strained multi quantum well structures

Dr. Thomas Koprucki, Priv.-Doz. Dr. Uwe Bandelow, Dr. Dietmar Horn

Supported by:
DFG: Priority Program 1095 ,,Analysis, modeling and simulation of multiscale problems``

WIAS-QW is a numerical code for the simulation of strained multi-quantum-well structures. Based upon multiband kp models it allows to treat band mixing effects, confinement effects, crystal symmetry, and the influence of mechanical strain.

In particular, WIAS-QW calculates the

  • subband dispersion,
  • eigenfunctions,
  • matrix elements of optical transitions,
  • miniband effects in multi-quantum-well structures.

In dependence on the sheet carrier densities and the temperature, WIAS-QW calculates the

  • optical response function,
  • gain spectrum,
  • radiative recombination rate,
  • carrier density distributions.

Furthermore, the calculations can be done selfconsistently, comprising pure kp calculations, but also calculations which include the Hartree-Coulomb potential, obtained from Poisson's equation, as well as density-dependent exchange-correlation potentials, which account for the bandgap-shift, one of the most prominent many-particle effects.


  1. U. Bandelow, H.-Chr. Kaiser, Th. Koprucki, and J. Rehberg.
    Spectral Properties of k · p Schrödinger Operators in One Space Dimension.
    Numerical Functional Analysis and Optimiziation 21 (2000) 379-409. Preprint.
  2. U. Bandelow, H.-Chr. Kaiser, Th. Koprucki, and J. Rehberg.
    Modeling and simulation of strained quantum wells in semiconductor lasers.
    In W. Jäger and H.-J. Krebs (Editors): Mathematics - Key Technology for the Future. Joint Projects Between Universities and Industry, Springer Verlag, Berlin Heidelberg, 2003, pp. 377-390. Preprint.
  3. U. Bandelow, R.Hünlich, and Th. Koprucki.
    Simulation of Static and Dynamic Properties of Edge-Emitting Multiple-Quantum-Well Lasers.
    IEEE Journal of Selected Topics in Qunatum Electronics 9 (2003) 798-806. Preprint.
  4. Th. Koprucki, M. Baro, U. Bandelow, T. Tien, F. Weik, J. Tomm, M. Grau, and M.-C. Amann.
    Electronic structure and optoelectronic properties of strained InAsSb/GaSb multiple quantum wells.
    Applied Physics Letters 87 (2005) 181911/1-181911/3. Preprint.
  5. Th. Koprucki, H.-C. Kaiser, and J. Fuhrmann.
    Electronic states in semiconductor nanostructures and upscaling to semi-classical models.
    In A. Mielke, Editor, Analysis, Modeling and Simulation of Multiscale Problems, Springer Verlag, Heidelberg, 2006, pp. 365-394. Preprint.
  6. Th. Koprucki.
    Zu kp-Schrödingeroperatoren.
    Dissertation, FB Mathematik/Informatik, Freie Universität Berlin, 2008.