A 1D coupled Schrödinger drift-diffusion model including collisions
- Baro, Michael
- Ben Abdallah, Naoufel
- Degond, Pierre
- El Ayyadi, Asma
We consider a one-dimensional coupled stationary Schroedinger drift-diffusion model for quantum semiconductor device simulations. The device domain is decomposed into a part with large quantum effects (quantum zone) and a part where quantum effects are negligible (classical zone). We give boundary conditions at the classic-quantum interface which are current preserving. Collisions within the quantum zone are introduced via a Pauli master equation. To illustrate the validity we apply the model to three resonant tunneling diodes.
- Journal of Computational Physics, 2005, Vol. 203, no. 1, pp. 129-153