WIAS Preprint No. 2088, (2015)

Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers


  • Radziunas, Mindaugas
    ORCID: 0000-0003-0306-1266
  • Herrero, Ramon
  • Botey, Muriel
  • Staliunas, Kestutis

2010 Mathematics Subject Classification

  • 35Q60 35B27 78A60 78A45 42B37

2008 Physics and Astronomy Classification Scheme

  • 42.60.By 42.60.Da 42.60.Fc 42.60.Jf


  • semiconductor amplifier, traveling wave model, coupled mode approach, periodic structure, anisotropy, far field, spatial filtering




We perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component.

Appeared in

  • J. Opt. Soc. Amer. B Opt. Phys., 32 (2015) pp. 993--1000.

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