WIAS Preprint No. 1506, (2010)

Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers


Authors

  • Radziunas, Mindaugas
    ORCID: 0000-0003-0306-1266
  • Vladimirov, Andrei G.
    ORCID: 0000-0002-7540-8380
  • Viktorov, Evgeny A.

2010 Mathematics Subject Classification

  • 78A60 35Q60 35B30

2008 Physics and Astronomy Classification Scheme

  • 42.55.Px, 85.35.Be, 73.63.Kv, 42.60.Fc

Keywords

  • quantum dots, semiconductor laser, saturable absorber, mode-locking, optical mode

DOI

10.20347/WIAS.PREPRINT.1506

Abstract

We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.

Appeared in

  • Semiconductor Lasers and Laser Dynamics IV, K. Panayotov, M. Sciamanna, A.A. Valle, R. Michalzik, eds., vol. 7720 of Proceedings of SPIE, SPIE, 2010, pp. 77200X/1--77200X/8

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