WIAS Preprint No. 2857, (2021)
Spatially modulated broad-area lasers for narrow lateral far-field divergence
Authors
- Zeghuzi, Anissa
- Koester, Jan-Philipp
ORCID: 0000-0001-6399-5306 - Radziunas, Mindaugas
ORCID: 0000-0003-0306-1266 - Christopher, Heike
- Wenzel, Hans
ORCID: 0000-0003-1726-0223 - Knigge, Andrea
2020 Mathematics Subject Classification
- 78A60 78A45 35Q60 78-04 37M05
Keywords
- High-power broad-area semiconductor lasers, traveling-wave model, spatial modulation of gain and index, lateral modes, far-field narrowing
DOI
Abstract
A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3-degree full width at half maximum where a 0.4-degree-wide main lobe contains 40% of the emitted optical output power. While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central one-degree angular range, the measured far-field intensity outside of the obtained central peak remains high.
Appeared in
- Opt. Express, 29 (2021), pp. 25133--25141, DOI 10.1364/OE.430804 .
Download Documents