Simulation and design of a compact GaAs based tunable dual-wavelength diode laser system
Authors
- Koester, Jan-Philipp
ORCID: 0000-0001-6399-5306 - Radziunas, Mindaugas
ORCID: 0000-0003-0306-1266 - Zeghuzi, Anissa
- Wenzel, Hans
ORCID: 0000-0003-1726-0223 - Knigge, Andrea
2010 Mathematics Subject Classification
- 78A60 35Q60 78-04 78A50
Keywords
- Tunable laser diodes, dual-wavelength laser, traveling-wave model
DOI
Abstract
We present our design of a compact, integrated and tunable dual-wavelength diode laser system emitting around 785 nm, which is of interest for several applications like Raman spectroscopy and the generation of THz radiation. To achieve a more compact device compared to previous GaAs based designs two etch depths are realized, leading to shallowly etched ridge waveguides in regions were optical gain is applied and deeply etched waveguides used to enable compact integrated waveguide components. The device parameters are optimized using a numerically efficient simulation tool for passive waveguides. Subsequently, the entire laser system is further analyzed applying a sophisticated traveling-wave equation based model for active devices giving access to internal intensity and carrier density distributions. It is shown that active laser simulations are crucial to deduce critical and performance limiting design aspects not accessible via an all-passive simulation.
Appeared in
- Opt. Quantum Electron., 51 (2019), pp. 334/1--334/12, DOI 10.1007/s11082-019-2050-2 .
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