WIAS Preprint No. 1189, (2006)

Classical solutions of drift-diffusion equations for semiconductor devices: The 2D case



Authors

  • Kaiser, Hans-Christoph
  • Neidhardt, Hagen
  • Rehberg, Joachim

2010 Mathematics Subject Classification

  • 35K45 35K50 35K55 35K57 78A35

Keywords

  • Initial boundary value problem, reaction-diffusion processes, quasi-linear prarbolic systems

Abstract

We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we reformulate the (generalized) van Roosbroeck system as an evolution equation for the potentials to the driving forces of the currents of electrons and holes. This evolution equation falls into a class of quasi-linear parabolic systems which allow unique, local in time solution in certain Lebesgue spaces. In particular, it turns out that the divergence of the electron and hole current is an integrable function. Hence, Gauss' theorem applies, and gives the foundation for space discretization of the equations by means of finite volume schemes. Moreover, the strong differentiability of the electron and hole density in time is constitutive for the implicit time discretization scheme. Finite volume discretization of space, and implicit time discretization are accepted custom in engineering and scientific computing. ---This investigation puts special emphasis on non-smooth spatial domains, mixed boundary conditions, and heterogeneous material compositions, as required in electronic device simulation.

Appeared in

  • Nonlinear Anal., 71 (2009) pp. 1584--1605.

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