WIAS Preprint No. 2630, (2019)

Drift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices



Authors

  • Doan, Duy Hai
  • Fischer, Axel
  • Fuhrmann, Jürgen
    ORCID: 0000-0003-4432-2434
  • Glitzky, Annegret
  • Liero, Matthias
    ORCID: 0000-0002-0963-2915

2010 Mathematics Subject Classification

  • 65M08 35J92 80M12 80A2

Keywords

  • Non-isothermal drift-diffusion, organic semiconductors, finite volumes, generalized Scharfetter-Gummel scheme, path following

DOI

10.20347/WIAS.PREPRINT.2630

Abstract

We present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.

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