Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers
- Radziunas, Mindaugas
- Herrero, Ramon
- Botey, Muriel
- Staliunas, Kestutis
2010 Mathematics Subject Classification
- 35Q60 35B27 78A60 78A45 42B37
2008 Physics and Astronomy Classification Scheme
- 42.60.By 42.60.Da 42.60.Fc 42.60.Jf
- semiconductor amplifier, traveling wave model, coupled mode approach, periodic structure, anisotropy, far field, spatial filtering
We perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component.
- J. Opt. Soc. Amer. B Opt. Phys., 32 (2015) pp. 993--1000.