Modeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices
- Radziunas, Mindaugas
- Ciegis, Raimondas
2010 Mathematics Subject Classification
- 65M06 65M20 65M99 35Q60 65M12
- broad area device, traveling wave model numerical scheme, simulations, beam improvement
A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts.
- PPAM 2013, Part II, LNCS 8385, R. Wyrzykowski, et al., eds., Springer 2014, 2013, pp. 332--342