Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures
- Kantner, Markus
- Koprucki, Thomas
2008 Physics and Astronomy Classification Scheme
- 02.60.Cb, 47.11.Df, 72.20.-i
- cryogenic temperatures, drift-diffusion, transport, device simulation
At cryogenic temperatures the electron-hole plasma in semiconductor materials becomes strongly degenerate, leading to very sharp internal layers, extreme depletion in intrinsic domains and strong nonlinear diffusion. As a result, the numerical simulation of the drift-diffusion system suffers from serious convergence issues using standard methods. We consider a one-dimensional p-i-n diode to illustrate these problems and present a simple temperature-embedding scheme to enable the numerical simulation at cryogenic temperatures. The method is suitable for forward-biased devices as they appear e.g. in optoelectronic applications.
- Opt. Quantum Electron., 48 (2016), pp. 543/1--543/7, DOI 10.1007/s11082-016-0817-2 .