WIAS Preprint No. 2169, (2015)

Efficient current injection into single quantum dots through oxide-confined pn-diodes



Authors

  • Kantner, Markus
  • Bandelow, Uwe
    ORCID: 0000-0003-3677-2347
  • Koprucki, Thomas
    ORCID: 0000-0001-6235-9412
  • Schulze, Jan-Hindrik
  • Strittmatter, André
  • Wünsche, Hans-Jürgen

2010 Mathematics Subject Classification

  • 65N08, 65Z05

2008 Physics and Astronomy Classification Scheme

  • 85.30.De, 85.60.Bt, 85.60.Jb

Keywords

  • single-photon emitters, semiconductor device simulation, current confinement

Abstract

Current injection into single quantum dots embedded in vertical pn-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. Experimental and theoretical evidence is found for a rapid lateral spreading of the carriers after passing the oxide aperture in the conventional pin-design. By an alternative design employing p-doping up to the oxide aperture the current spreading can be suppressed resulting in an enhanced current confinement and increased injection efficiencies, both, in the continuous wave and under pulsed excitation.

Appeared in

  • IEEE Trans. Electron Devices, 63 (2016), pp. 2036--2042.

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