WIAS Preprint No. 1028, (2005)

Electronic structure and optoelectronic properties of strained InAsSb/GaSb multi quantum wells



Authors

  • Koprucki, Thomas
    ORCID: 0000-0001-6235-9412
  • Baro, Michael
  • Bandelow, Uwe
    ORCID: 0000-0003-3677-2347
  • Tien, Tran Q.
  • Weik, Fritz
  • Tomm, Jens W.
  • Grau, Markus
  • Amann, Markus-Christian

2010 Mathematics Subject Classification

  • 82D37 78A60

Keywords

  • Optoelectronic devices, light emitting devices, Indium-Arsenide-Antimonide, strained multi quantum-wells, photoluminescence meassurements, absorption measurements, Stokes shift, kp simulations

Abstract

A study of the optical properties of a set of InAsxSb1-x/Al0.15In0.85As0.77Sb0.23/GaSb multiple quantum-wells (for x between 0.82 and 0.92) with build-in strains in the -0.62% to +0.05%-range is presented. The energy of the lowest quantum-confined optical transition is calculated by kp perturbation theory and experimentally determined by absorption measurements. Stokes shift of photoluminescence, photocurrent and of the emission from light emitting devices against the absorption edge of the quantum-well are quantified. The impact of the decreasing carrier confinement in the InAsxSb1-x quantum well system with increasing mole fraction is analyzed theoretically, and experimentally demonstrated by photoluminescence measurement. Our results allow for the improvement of optoelectronic devices, in particular for tailoring emission spectra of light emitting diodes.

Appeared in

  • Appl. Phys. Lett. 87, 181911 (2005)

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