Numerical simulation of coherent spin-shuttling in a QuBus with charged defects
Authors
- Ciroth, Nils
- Sala, Arnau
- Xue, Ran
- Ermoneit, Lasse
ORCID: 0009-0006-0329-0164 - Koprucki, Thomas
ORCID: 0000-0001-6235-9412 - Kantner, Markus
ORCID: 0000-0003-4576-3135 - Schreiber, Lars R.
2020 Mathematics Subject Classification
- 35Q41 35Q81 78A30, 78M10, 81V65
Keywords
- Spin-qubits, quantum computers, quantum dots, semiconductor device simulation, electron-phonon interaction, Lindblad master equation, open quantum systems, Schrödinger wave packet propagation.
DOI
Abstract
Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin-coherence of conveyor-mode shuttling in Si/SiGe. We simulate the quantum evolution of a mobile electron spin-qubit under the influence of sparse and singly charged point defects placed in the Si/SiGe heterostructure in close proximity to the shuttle lane. We consider different locations of a single charge defect with respect to the center of the shuttle lane, multiple orbital states of the electron in the shuttle with g-factor differences between the orbital levels, and orbital relaxation induced by electron-phonon interaction. With this simulation framework, we identify the critical defect density of charged point defects in the heterostructure for conveyor-mode spin qubit shuttle devices and quantify the impact of a single defect on the coherence of a qubit.
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