WIAS Preprint No. 1001, (2005)

Stationary energy models for semiconductor devices with incompletely ionized impurities



Authors

  • Glitzky, Annegret
    ORCID: 0000-0003-1995-5491
  • Hünlich, Rolf

2010 Mathematics Subject Classification

  • 80A20

Keywords

  • Energy models, mass, charge and energy transport in heterostructures, strongly coupled elliptic systems, mixed boundary conditions, Implicit FunctionTheorem, existence, uniqueness, regularity

DOI

10.20347/WIAS.PREPRINT.1001

Abstract

The paper deals with two-dimensional stationary energy models for semiconductor devices, which contain incompletely ionized impurities. We reduce the problem to a strongly coupled nonlinear system of four equations, which is elliptic in nondegenerated states. Heterostructures as well as mixed boundary conditions have to be taken into account. For boundary data which are compatible with thermodynamic equilibrium there exists a thermodynamic equilibrium. Using regularity results for systems of strongly coupled linear elliptic differential equations with mixed boundary conditions and nonsmooth data and applying the Implicit Function Theorem we prove that in a suitable neighbourhood of such a thermodynamic equilibrium there exists a unique stationary solution, too.

Appeared in

  • Z. angew. Math. Mech. 85(11) (2005) 778-792

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