Excellence in Photonic Crystal Surface Emitting Lasers (PCSELence)



Project

This Leibniz Association’s Cooperative Excellence project is led by Ferdinand-Braun Institute (FBH) in Berlin (project coordinator: Dr. Paul Crump). Weierstrass Institute (WIAS) acts as a partner institution in this project (PIs: Dr. Mindaugas Radziunas, Dr. Jürgen Fuhrmann, Dr. Patricio Farrell; project researcher: Dr. Eduard Kuhn). A further (associated) project partner is the Center of Excellence for Photonic-Crystal Surface-Emitting Lasers at Kyoto University (led by Prof. Susumu Noda).

The project's timespan is 01.01.2023- 31.03.2026, whereas WIAS starts on 01.04.2023. The main aims of the project are modeling and design (FBH+WIAS), as well as fabrication and characterization (FBH) of novel high-power Photonic Crystal Surface Emitting Laser (PCSEL) devices. This will be achieved by combining the expertise of the cooperation partners in semiconductor laser modeling, design, fabrication, and characterization.

Short description

Semiconductor diode lasers are small, efficient, and relatively cheap devices used in many modern applications. Multiple applications require emission powers exceeding several ten Watts from a single diode and up to a few kiloWatts from a combined laser system. In this project, we consider novel Photonic Crystal Surface-Emitting Lasers (PCSELs), which, in contrast to conventional high-power edge-emitting broad-area lasers (BALs), are capable of emitting high power (up to 80 W at the moment [Inoue NatComm23]) beams of nearly perfect quality in the (z) direction, perpendicular to the (x/y) plain of active material. The critical part of PCSELs, enabling an efficient coupling of within the active layer generated optical fields and their redirection along the z axis, is a properly constructed 2-dimensional photonic crystal layer. In simple cases, this PC layer can be vertically homogeneous or consist of several vertically homogeneous layers (e.g., three layers as shown in Figure 1). In many more general cases, when the borders of the PC features are not vertical, the whole PC layer still can be reasonably well approximated by multiple very thin vertically homogeneous layers.


Figure 1: Schematics of the PCSEL with PC layer consisting of three vertically homogeneous sublayers.

The initial model to be considered and integrated numerically [Inoue PRB19] is derived from Maxwell equations and is a 1 (time)+2 (space) dimensional system of PDEs for complex optical fields u(t,x,y)=(u+,u-)T, v(t,x,y)=(v+,v-)T, and real carrier density N(t,x,y):

(1)
whereas the complex field functions u± and v± satisfy boundary conditions (BCs)
(2)
Besides, an efficient location of several leading modes (Λ,Θ) of the related spectral problem [Liang OE12],
(3)
defined by a system of four 2-D PDEs, is of great importance when designing PCSEL devices.

Several significant challenges arising when treating the above-stated problems are a nontrivial construction of the implicitly defined 4×4 field coupling matrix C, requiring a solution of the Helmholtz problem and multiple integrations of the calculated mode profile with different separately constructed exponentially growing and decaying Green's functions, as well as simulations and (spectral) analysis of large discrete problems relating up to several million variables in large-emission-area (large L) PCSELs.

Spectral solver

In the frame of the PCSELence project, we have developed analytic-expression-based algorithms for the construction of the field coupling matrix C entering model equations (1) and (3). Our algorithms bypass computer arithmetic-induced problems when dealing with large and small exponentials; they are fast and exact, in contrast to approximative approaches or procedures based on numerical integration methods [1,2]. These algorithms were explored in our numerical solver suited for resolving spectral problems for PCSELs with multiple photonic crystal layers and large emission areas. We demonstrated that finite difference schemes of second and higher order created using coarse numerical meshes provide sufficient accuracy for several major (lowest-threshold) modes of particular device designs [2,3]. Such calculations are beneficial when looking for PCSEL designs with low thresholds and good main mode gain separation, which is crucial when seeking a single-mode high-quality emission. Moreover, our solver can also be used to predict an intrinsic linewidth if the stable single-mode operation of PCSEL is ensured [4].


Figure 2: Spectra of the benchmark problem. Left, top panels: main eigenvalues in the system with L=2000 μm. Violet: eigenfunctions of C. Green and orange: exact eigenvalues of the decoupled 1D systems for horizontally/vertically propagating fields. Blue: eigenvalues of the full 2D problem. Bottom panels: total field intensity of five leading modes (indicated by symbols in upper panels). Right: evolution of two main eigenvalues in the discretized systems with increasing finesse of numerical mesh for two different domain sizes.

Figure 2 represents typical results of our simulations. Here we calculate a bunch of the most important modes of the discretized spectral problem (3) (see small light-blue dots in the upper-left panel); compare their eigenvalues to those of two limit-case problems (large bullets in the same panel); inspect spatial distributions of five main modes (lower-left panels); and consider the dependence of two main modes on the discretization of the domain (right-side panels). It is crucial to maximizing the real part of the eigenvalue Λ of the main mode (shift by the square box indicated eigenvalue in the upper-left panel as close to the horizontal abscissa axis as possible), increase the gain separation between two principal modes (shown, e.g., in the right-side panels), and reduce the field loss fraction of the main mode at the domain bounds (factor ηedge indicated within lower-left panels).

Bibliography

[Inoue NatComm23] T. Inoue et al., “Self-evolving photonic crystals for ultrafast photonics,” Nat Commun 14:50, 2023

[Inoue PRB19] T. Inoue et al., “Comprehensive analysis of photonic-crystal surface-emitting lasers via time-dependent three-dimensional coupled-wave theory,” Phys. Rev. B 99:035308, 2019

[Liang OE12] Y. Liang et al., “Three-dimensional coupled-wave analysis for square-lattice photonic crystal surface emitting lasers with transverse-electric polarization: finite-size effects,” Optics Express 20(14):15945, 2012

Own publications

[1] M. Radziunas, E. Kuhn, H. Wenzel, B. King, and P. Crump, “Calculation of optical modes in large emission area photonic crystal surface-emitting lasers,” in Proceedings of the 23th Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD 2023), Turin, Italy, September 18-21, pp. 89-90, 2023, DOI: 10.1109/NUSOD59562.2023.10273475. pdf file.

[2] M. Radziunas, E. Kuhn, H. Wenzel, “Solving a spectral problem for large-area photonic crystal surface-emitting lasers,” WIAS Preprint, (3059), 2023.

[3] M. Radziunas, E. Kuhn, H. Wenzel, B. King, and P. Crump “Optical mode calculation in large-area photonic crystal surface-emitting lasers,“ to appear in IEEE Photonics Journal, DOI: 10.1109/JPHOT.2024.3380532. WIAS Preprint, (3075), 2023.

[4] H. Wenzel, E. Kuhn, B. King, P. Crump, and M. Radziunas, “Theory of the linewidth-power product of photonic-crystal surface-emitting lasers,” (arXiv:2402.11246 [physics.optics]), 2024.

Contact

For further information please contact
Dr. Mindaugas Radziunas
Weierstrass-Institute for Applied
Analysis and Stochastics
Mohrenstrasse 39
10117 Berlin
Tel.: (030) 20372-441
Fax : (030) 2044975
E-mail: radziunas@wias-berlin.de
WWW: http://www.wias-berlin.de