HV MOST
Modelling and simulation of power devices for high-voltage integrated circuits


<--  Scheme of a High Voltage MOS Transistor (alpha microelectronics gmbh Frankfurt (Oder))
Head: R. Hünlich
Team: G. Albinus, H. Gajewski, A. Glitzky, J. A. Griepentrog, W. Röpke
Cooperation: W. Pfau, J. Knopke, R. Rothe (alpha microelectronics gmbh Frankfurt (Oder))
B. Heinemann (Institut für Halbleiterphysik Frankfurt (Oder))
K. Gröger
W. Merz (Institut für Angewandte Mathematik Universität Erlangen)
Term: July 1997 - June 2000
Support: BMBF   Mathematikprogramm 1997 - 2000  Grant 03HU7FV1/0
Summary

In the computer aided design of high-voltage Integrated Circuits (ICs) and in the development of their technology process and device simulation programmes turned out to be important tools. Challenges of new technologies and devices require a permanent discussion of underlying physical models, the mathematical analysis of related model equations, as well as the improvement of simulation codes.
The main goal of this project was the extension of the device simulator WIAS-TeSCA by a self-consistent coupling of the drift-diffusion model with a heat flow equation since thermal and thermoelectric effects must not be neglected in power devices. The industrial partner of the project is the company alpha microelectronics gmbh Frankfurt (Oder). The company develops application specific ICs for high-voltage applications. Power transistors in such ICs were used as test structures for the development of WIAS-TeSCA. Now WIAS-TeSCA can be used for the simulation of different kinds of power devices. Such simulations supported the design of the devices effectively.
Another goal of the project was the continuation of the mathematical investigation of model equations which device and process simulations are based on. New results were obtained as well for some thermodynamic energy model which is implemented in WIAS-TeSCA as for a class of pair diffusion models which are relevant for semiconductor technology. Here one had to take into account that all the problems involve non-smooth data.
Results
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