Nonlinear Dynamics in Semiconductor Lasers - Abstract

Troppenz, Ute

Electro-absorption modulated lasers (EML) as versatile ?workhorses? in future high speed datacom systems

Fraunhofer HHI has been developing InP based EMLs over almost a decade. Although the chosen design of identical active layer structure for both the DFB laser and the electro-absorption modulator (EAM) looks rather simple, the tiny EML chip turns out to be a powerful and versatile transmitter component. A modulation rate of 56 GBd is routinely achievable, even a symbol rate of 100 GBd has been demonstrated recently. Hence, a single-wavelength 100 G transmitter may be implemented using a single EML chip. Ways to further increase of the aggregated data rate per chip are provided by more advanced designs like, for example, an array of 4-EMLs. Here, operation with 224 Gb/s (4x 56 GBd) has already been shown. In addition, an optical booster amplifier in front of the EAM may allow for output powers of >10 dBm, where even at 56 Gb/s the integrated amplifier does not affect the modulation behavior The talk will present recent progress and developments of the HHI-EMLs in terms of highest modulation bandwidth, increase of output power and uncooled operation regime.