Nonlinear Dynamics in Semiconductor Lasers - Abstract

Bimberg, Dieter

High brightness and peak power ps-pulses from 1060-nm HIBBEE- lasers

Edge-emitting semiconductor lasers having a highly-asymmetric vertical waveguide are presented and numerically modelled. Ridge-waveguide lasers fabricated along the lines of modelling provide record single-transverse mode power of 2.1.W with a maximum brightness of 50 MWcm-2sr-1 and operating current independent ultra-low astigmatism of only 2.5 µm. Picosecond pulses down to 20 ps with peak brightness up to 130 MWcm-2sr-1 are demonstrated in the frequency range up to 100 MHz based on gain-switching . Record peak power of 3W and brightness of 180 MWcm-2sr-1 is reported for 5-40 GHz repetition rate under passive mode-locking. References [1] D. Bimberg et al., "High-power high-brightness semiconductor lasers based on novel waveguide concepts," Proc. SPIE, vol. 7616, pp. 76161I (2010). [2] M. J. Miah et al., "1.9 W Continuous-Wave Single Transverse Mode Emission from 1060 nm Edge-Emitting Lasers with Vertically Extended Lasing Area,” Appl. Phys. Lett., Vol. 105, No. 15, 151105 (2014). [3] M. J. Miah et al., "High temperature operation of 1060 nm high-brightness photonic band crystal lasers with very low astigmatism,” IEEE J. Select. Top. Quantum Electron.,Vol. 21, No. 6, 4900206 (2015). D.Bimberg, V.P. Kalosha, Md. J. Miah and R. Rosales Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany and PBC Lasers GmbH, Berlin