Leibniz MMS Days 2022 - Abstract
Manganelli, Costanza Lucia
Recently, the goal of obtaining a light source fully integrated on Silicon has boosted the exploitation of alternative semiconductor materials (strained Ge, GeSn, SiGeSn), whose properties and performance appear superior to those of Silicon itself, towards their application in photonics, sensing and THz technology. Among these perspectives, the experimental analysis such as Raman Spectroscopy or Photoluminesce needs to be coupled to a proper simulation platform, in order not only to give the correct interpretation of experimental data, but also to provide prediction and optimization of material process and device design.Here we provide a systematic study on how the temperature-dependent distribution of strain can impact the optical performance of semiconductor devices. We investigated strained Ge microstructures, considering the influence of mechanical and thermo-mechanical features on the optical properties, instrumental to develop a guideline for integrated light emitters.