AMaSiS 2021 - Abstract

Anisuzzaman, Boni

Impact of capture time on series resistance of high power diode lasers

Coauthors: Hans-Jürgen Wünsche, Hans Wenzel and Paul Crump
Ferdinand-Braun-Institut gGmbH, Germany

Series resistance is one of the main factors limiting conversion efficiency in GaAs-based broad area lasers, especially at high bias. Experimental results for GaAs-based single quantum well structures differing in the Al content of the optical confinement and cladding layers show an unexpected increase of the series resistance with decreasing heat sink temperature. We developed a theoretical model combining a one dimensional drift-diffusion model (solved under the condition of local charge neutrality, as appropriate to diode lasers), to describe the current flow outside of the quantum well, with a model describing the quantum well capture-escape process and a laser model. We show that the finite capture time is responsible for an additional contribution to the measured series resistance and that the simulation results reproduce well the experimental findings.

References
[1] C. Frevert, S. Knigge, G. Erbert, F. Bugge and P. Crump, Influence of Quantum Well Barrier Height on Series Resistance in GaAs-Based Broad Area Diode Lasers, Proc. IEEE International Semiconductor Laser Conference (ISLC), 2018, 1-2.
[2] A. Boni, H.J. Wünsche, H. Wenzel and P. Crump, Impact of the capture time on the series resistance of quantum-well diode lasers, Semiconductor Science and Technology, (2020), 085032.