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WIAS Preprint No. 1506, (2010)

Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers


Authors

2010 Mathematics Subject Classification

2008 Physics and Astronomy Classification Scheme

Keywords

Abstract

We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.

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