SiC Growth by Physical Vapor Transport:
Setup of Growth Apparatus
Fig. 1:
Setup of growth apparatus according to M. PONS, M.
ANIKIN, K. CHOUROU, J.M. DEDULLE,
R. MADAR, E. BLANQUET, A. PISCH,
C. BERNARD, P. GROSSE, C. FAURE,
G. BASSET, Y. GRANGE, State
of the art in the modelling of SiC sublimation growth , Mater. Sci.
Eng. B 61-62 (1999), 18-28.
Results of computations by
WIAS-HiTNIHS for the
evolution of the temperature at the points
Ttop,
Tseed ,
Tpowder surface,
Tpowder center, and
Tbottom
are presented on the page
Numerical Results Computed By WIAS-HiTNIHS.
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Numerical Simulation and Control of Sublimation Growth of SiC Bulk Single Crystals
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