Modeling of Electronic Properties of Interfaces in Solar Cells


Coworker Annegret Glitzky, Alexander Mielke, Matthias Liero, Reiner Nürnberg
Cooperation
Period June 2010 - May 2014
Support DFG Research Center MATHEON
Mathematics for key technologies: Modelling, simulation, and optimization of real-world processes,
Project D22

Scope

Solar cells consist of layers of different semiconducting materials. In thin-film solar cells the interfaces have a strong impact on the functionality of the device. Nanoscale-treatment of interfaces like doping near the interface or deposition of atoms into the interface is used to tune the electronic properties. Our partners at the Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) are investigating solar cell concepts containing layers of amorphous and crystalline silicon (a-Si:H/c-Si). The key issues for enhancing the efficiency are the reduction of recombination losses at the a-Si:H/c-Si interface and the improvement of the charge-carrier transport over the heterointerface.

The bulk equations are drift-diffusion models for the charge carriers coupled with ODEs for immobile defects, which may capture and release electrons or holes. The light that generates the electron-hole pairs, is treated as a given source term in our modelling, while it is calculated in project D23. While the equations in the bulk are well established, the modeling of the kinetics of defects on transition layers and at interfaces is a topic of current research in the physics community. The band offsets at the interface and the non-vanishing state density in the a-Si:H mobility gap provide complications, e.g. tunneling of electrons from c-Si layers into defect states with energy levels inside the band gap of a-Si layers. So far, there was no mathematical theory for special interface conditions. For heterogeneous materials always the classical interface conditions are used, like the continuity of normal fluxes and chemical potentials.

The aim of this project is to find reasonable hybrid models for electronic properties of solar cells coupling partial differential equations in the bulk with reaction-diffusion systems on the interface via suitable linear and nonlinear transmission conditions. These models are then studied regarding their analytical properties. Finally, the derivation of suitable numerical approximation schemes is necessary to provide simulation results.

Matheon Poster: Modeling of electronic properties of interfaces in solar cells
Matheon Talk: Modeling of electronic properties of interfaces in solar cells (January 2010, A. Mielke and A. Glitzky)
Hole current in heterostructured solar cell
Simulation using WIAS-TeSCA: Hole current for a structured interface in a heterostructured solar cell.
Solar cell
Principle of solar cells: photons generate electron-hole pairs, electrons/holes move to the contacts. The aim consists in minimizing the recombination losses.

Publications

Proceedings

Talks

Publications related to the project

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Last Update: 24.01.2012