Mathematical Challenges of Quantum Transport in Nano-Optoelectronic Systems - Abstract
Wulf, Ulrich
We consider a thermal model for an integrated circuit with an active (i. e. heat producing) layer of quantum devices located above a heat sink. As the simplest scenario the heat transport problem between active layer and heat sink is taken as homogeneos in the layer directions and quasi-stationary in time. The temperature of the active device layer can be found from the solution of a fix-point problem when the temperature of the heat sink is given. We analyze the possible numbers of fix-points and their stability for a general device type. Numerical solutions for a device layer of quantum transistors are given for selected parameters.