Nonlinear Dynamics in Semiconductor Lasers - Abstract
Grillot, Frederic
Novel semiconductor quantum nanostructure (QN) laser diodes are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. QN lasers have attracted a lot of interest in the last decade owing to their expected remarkable properties arising from charge carrier confinement in the three spatial dimensions. Semiconductor QN mode-locked lasers (MLLs) are also important as compact and cost-effective sources of picosecond or sub-picosecond optical pulses with moderate peak powers. These have potential use in various fields including optical interconnects for clock distribution at an inter-chip/intra-chip level as well as high bit-rate optical time division multiplexing (OTDM), and microwave signal generation. However QN devices may have intrinsic limitations associated with semiconductor laser dynamics that can hinder the performance including the mode stability, spectral linewidth, and direct modulation capabilities. One possible method to overcome these limitations is to use external control techniques. The purpose of this paper is to show the different routes, which can be exploited to control the overall performance of semiconductor QN lasers. Various experimental and theoretical results will be presented. This research intends to provide the building-blocks for the realization of innovative and integrated photonic devices for applications in telecommunications, defense and security as well as for future optical interconnect.