1st Leibniz MMS Days - Abstract

Capellini, Giovanni

Modeling of an Edge-Emitting strained-Ge laser

In this talk we present a detailed simulation of the emission properties of an edge-emitting Ge laser device relying on a material-gain model accounting for the influence of the tensile strain distribution, doping, and operating temperature which has been validated and calibrated using temperature-dependent micro-photoluminescence measurements performed on Ge microstrips featuring different tensile strain values and doping profiles.